IXSJ43N120R1K IXYS
Виробник: IXYSDescription: 1200V 36M (43A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 20A, 18V
Power Dissipation (Max): 143.7W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: ISO247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 800 V
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Технічний опис IXSJ43N120R1K IXYS
Description: 1200V 36M (43A @ 25C) SIC MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 47mOhm @ 20A, 18V, Power Dissipation (Max): 143.7W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 11.1mA, Supplier Device Package: ISO247-4L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 800 V.
Інші пропозиції IXSJ43N120R1K
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXSJ43N120R1K | Виробник : IXYS |
SiC MOSFETs 1200V 36mohm (43A a. 25C) SiC MOSFET in isolated TO247-4L |
товару немає в наявності |