| Кількість | Ціна |
|---|---|
| 2+ | 279.78 грн |
| 10+ | 147.19 грн |
| 100+ | 119.55 грн |
| 500+ | 116.04 грн |
| 1000+ | 109.71 грн |
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Технічний опис IXTA08N100D2 IXYS
Description: MOSFET N-CH 1000V 800MA TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V, Power Dissipation (Max): 60W (Tc), Supplier Device Package: TO-263AA, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V.
Інші пропозиції IXTA08N100D2 за ціною від 92.11 грн до 316.47 грн
| Фото | Назва | Виробник | Інформація |
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IXTA08N100D2 | IXYS |
 Description: MOSFET N-CH 1000V 800MA TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V Power Dissipation (Max): 60W (Tc) Supplier Device Package: TO-263AA Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
на замовлення 5916 шт: термін постачання 21-31 дні (днів) |
|
| IXTA08N100D2 |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Description: MOSFET N-CH 1000V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
на замовлення 5916 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 316.47 грн |
| 50+ | 156.55 грн |
| 100+ | 142.19 грн |
| 500+ | 109.84 грн |
| 1000+ | 102.26 грн |
| 2000+ | 95.89 грн |
| 5000+ | 92.11 грн |