Технічний опис IXTA08N100D2HV TRL Ixys Corporation
Description: MOSFET N-CH 1000V 800MA TO263HV, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Tj), Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 25µA, Supplier Device Package: TO-263HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V.
Інші пропозиції IXTA08N100D2HV TRL
| Фото | Назва | Виробник | Інформація |
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IXTA08N100D2HV-TRL | Виробник : Littelfuse |
 Trans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV T/R |
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IXTA08N100D2HV-TRL | Виробник : IXYS |
Description: MOSFET N-CH 1000V 800MA TO263HV Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tj) Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: TO-263HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
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| IXTA08N100D2HV-TRL | Виробник : IXYS |
MOSFET IXTA08N100D2HV TRL |
товар відсутній |