на замовлення 10 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 235.57 грн |
| 10+ | 193.79 грн |
| 100+ | 142.53 грн |
| 250+ | 132.14 грн |
| 500+ | 123.23 грн |
| 1000+ | 109.87 грн |
| 2500+ | 103.93 грн |
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Технічний опис IXTA100N04T2 IXYS
Description: MOSFET N-CH 40V 100A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V.
Інші пропозиції IXTA100N04T2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXTA100N04T2 | Виробник : Littelfuse |
 Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) D2PAK |
товару немає в наявності |
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IXTA100N04T2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns Drain-source voltage: 40V Drain current: 100A On-state resistance: 7mΩ Power dissipation: 150W Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Kind of channel: enhancement Mounting: SMD Case: TO263 Reverse recovery time: 34ns Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 300 шт |
товару немає в наявності |
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IXTA100N04T2 | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 40V 100A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V |
товару немає в наявності |
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IXTA100N04T2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns Drain-source voltage: 40V Drain current: 100A On-state resistance: 7mΩ Power dissipation: 150W Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Kind of channel: enhancement Mounting: SMD Case: TO263 Reverse recovery time: 34ns Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |