IXTA10P50P-TRL IXYS
Виробник: IXYS
Description: MOSFET P-CH 500V 10A TO263
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
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Технічний опис IXTA10P50P-TRL IXYS
Description: MOSFET P-CH 500V 10A TO263, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V.
Інші пропозиції IXTA10P50P-TRL за ціною від 247.14 грн до 516.26 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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IXTA10P50P-TRL | IXYS |
Description: MOSFET P-CH 500V 10A TO263 Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: P-Channel |
на замовлення 56532 шт: термін постачання 21-31 дні (днів) |
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IXTA10P50P-TRL | IXYS |
MOSFETs TO263 500V 10A P-CH POLAR |
на замовлення 1317 шт: термін постачання 21-30 дні (днів) |
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| IXTA10P50P-TRL |
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Виробник: IXYS
Description: MOSFET P-CH 500V 10A TO263
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Description: MOSFET P-CH 500V 10A TO263
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
на замовлення 56532 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 503.26 грн |
| 10+ | 350.15 грн |
| 100+ | 270.36 грн |
| IXTA10P50P-TRL |
|
Виробник: IXYS
MOSFETs TO263 500V 10A P-CH POLAR
MOSFETs TO263 500V 10A P-CH POLAR
на замовлення 1317 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 516.26 грн |
| 10+ | 380.27 грн |
| 100+ | 262.33 грн |
| 500+ | 247.14 грн |