Технічний опис IXTA170N075T2 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 75V, Drain current: 170A, Power dissipation: 360W, Case: TO263, On-state resistance: 5.4mΩ, Mounting: SMD, Gate charge: 109nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: thrench gate power mosfet, Reverse recovery time: 63ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTA170N075T2
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IXTA170N075T2 | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 360W Case: TO263 On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 109nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 63ns кількість в упаковці: 1 шт |
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IXTA170N075T2 | Виробник : IXYS |
MOSFET 170 Amps 75V |
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IXTA170N075T2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 360W Case: TO263 On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 109nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 63ns |
товар відсутній |