IXTA1N120P IXYS

Description: MOSFET N-CH 1200V 1A TO263, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 63W (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.