IXTA1N200P3HV IXYS
Виробник: IXYS
Description: MOSFET N-CH 2000V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
Description: MOSFET N-CH 2000V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
на замовлення 1152 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 624.42 грн |
50+ | 480.13 грн |
100+ | 429.6 грн |
500+ | 355.73 грн |
1000+ | 320.15 грн |
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Технічний опис IXTA1N200P3HV IXYS
Description: MOSFET N-CH 2000V 1A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 2000 V, Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V.
Інші пропозиції IXTA1N200P3HV за ціною від 327.48 грн до 678.1 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IXTA1N200P3HV | Виробник : IXYS | MOSFET 2000V/1A HV Power MOSFET, TO-263HV |
на замовлення 3722 шт: термін постачання 21-30 дні (днів) |
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IXTA1N200P3HV | Виробник : Littelfuse | Trans MOSFET N-CH 2KV 1A 3-Pin(2+Tab) TO-263HV |
товар відсутній |
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IXTA1N200P3HV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us Mounting: SMD Case: TO263HV Kind of package: tube Power dissipation: 125W Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Reverse recovery time: 2.3µs Drain-source voltage: 2kV Drain current: 1A On-state resistance: 40Ω Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 1 шт |
товар відсутній |
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IXTA1N200P3HV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us Mounting: SMD Case: TO263HV Kind of package: tube Power dissipation: 125W Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Reverse recovery time: 2.3µs Drain-source voltage: 2kV Drain current: 1A On-state resistance: 40Ω Type of transistor: N-MOSFET Polarisation: unipolar |
товар відсутній |