IXTA1R4N120P IXYS
Виробник: IXYSDescription: MOSFET N-CH 1200V 1.4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 376.75 грн |
| 10+ | 304.73 грн |
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Технічний опис IXTA1R4N120P IXYS
Description: MOSFET N-CH 1200V 1.4A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V.
Інші пропозиції IXTA1R4N120P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IXTA1R4N120P | Виробник : IXYS |
MOSFET 1.4 Amps 1200V 15 Rds |
на замовлення 75 шт: термін постачання 21-30 дні (днів) |
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IXTA1R4N120P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 1.4A Pulsed drain current: 3A Power dissipation: 86W Case: TO263 Gate-source voltage: ±30V On-state resistance: 13Ω Mounting: SMD Gate charge: 24.8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns кількість в упаковці: 1 шт |
товар відсутній |
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IXTA1R4N120P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 1.4A Pulsed drain current: 3A Power dissipation: 86W Case: TO263 Gate-source voltage: ±30V On-state resistance: 13Ω Mounting: SMD Gate charge: 24.8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns |
товар відсутній |