IXTA1R6N100D2-TRL IXYS

Description: MOSFET N-CH 1000V 1.6A TO263, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 0V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).