Технічний опис IXTA1R6N100D2HV IXYS
Description: MOSFET N-CH 1000V 1.6A TO263HV, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 0V, Part Status: Active, Supplier Device Package: TO-263HV, Vgs(th) (Max) @ Id: 4.5V @ 100µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj), FET Type: N-Channel, Depletion Mode, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V.
Інші пропозиції IXTA1R6N100D2HV
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IXTA1R6N100D2HV | Littelfuse Inc. |
 Description: MOSFET N-CH 1000V 1.6A TO263HVDrain to Source Voltage (Vdss): 1000 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 0V Part Status: Active Supplier Device Package: TO-263HV Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj) FET Type: N-Channel, Depletion Mode Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXTA1R6N100D2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263 Mounting: SMD Reverse recovery time: 970ns Gate charge: 27nC Drain current: 1.6A On-state resistance: 10Ω Gate-source voltage: ±20V Power dissipation: 100W Drain-source voltage: 1kV Kind of channel: depletion Type of transistor: N-MOSFET Technology: Polar™ Case: TO263 Kind of package: tube Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTA1R6N100D2HV |
|
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 1.6A TO263HV
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Part Status: Active
Supplier Device Package: TO-263HV
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Description: MOSFET N-CH 1000V 1.6A TO263HV
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Part Status: Active
Supplier Device Package: TO-263HV
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
товару немає в наявності
В кошику
од. на суму грн.
| IXTA1R6N100D2HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Reverse recovery time: 970ns
Gate charge: 27nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: Polar™
Case: TO263
Kind of package: tube
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Reverse recovery time: 970ns
Gate charge: 27nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: Polar™
Case: TO263
Kind of package: tube
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.