IXTA200N055T2 IXYS
Виробник: IXYS
Description: MOSFET N-CH 55V 200A TO263
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 1+ | 351.28 грн |
| 50+ | 176.01 грн |
| 100+ | 160.35 грн |
| 500+ | 124.73 грн |
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Технічний опис IXTA200N055T2 IXYS
Description: MOSFET N-CH 55V 200A TO263, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції IXTA200N055T2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXTA200N055T2 | IXYS |
MOSFET 200 Amps 55V 0.0042 Rds |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXTA200N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Mounting: SMD Case: TO263 Polarisation: unipolar Reverse recovery time: 49ns Gate charge: 109nC On-state resistance: 4.2mΩ Drain-source voltage: 55V Drain current: 200A Power dissipation: 360W Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTA200N055T2 |
|
Виробник: IXYS
MOSFET 200 Amps 55V 0.0042 Rds
MOSFET 200 Amps 55V 0.0042 Rds
товару немає в наявності
В кошику
од. на суму грн.
| IXTA200N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 49ns
Gate charge: 109nC
On-state resistance: 4.2mΩ
Drain-source voltage: 55V
Drain current: 200A
Power dissipation: 360W
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 49ns
Gate charge: 109nC
On-state resistance: 4.2mΩ
Drain-source voltage: 55V
Drain current: 200A
Power dissipation: 360W
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.