IXTA24N65X2 IXYS
Виробник: IXYS
Description: MOSFET N-CH 650V 24A TO263AA
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 1+ | 437.51 грн |
| 50+ | 224.05 грн |
| 100+ | 205.01 грн |
| 500+ | 172.28 грн |
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Технічний опис IXTA24N65X2 IXYS
Description: MOSFET N-CH 650V 24A TO263AA, Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 390W (Tc), Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції IXTA24N65X2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXTA24N65X2 | IXYS |
MOSFETs TO263 650V 24A N-CH X2CLASS |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXTA24N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Case: TO263 On-state resistance: 0.145Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Features of semiconductor devices: ultra junction x-class Gate charge: 36nC Power dissipation: 390W |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTA24N65X2 |
|
Виробник: IXYS
MOSFETs TO263 650V 24A N-CH X2CLASS
MOSFETs TO263 650V 24A N-CH X2CLASS
товару немає в наявності
В кошику
од. на суму грн.
| IXTA24N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 36nC
Power dissipation: 390W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 36nC
Power dissipation: 390W
товару немає в наявності
В кошику
од. на суму грн.