Технічний опис IXTA260N055T2-7 Littelfuse
Description: MOSFET N-CH 55V 260A TO263-7, Packaging: Tube, Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7 (IXTA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V.
Інші пропозиції IXTA260N055T2-7
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IXTA260N055T2-7 | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns Case: TO263-7 Mounting: SMD Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Gate charge: 0.14µC Kind of channel: enhanced Reverse recovery time: 60ns Drain-source voltage: 55V Drain current: 260A On-state resistance: 3.3mΩ кількість в упаковці: 1 шт |
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IXTA260N055T2-7 | Виробник : IXYS |
Description: MOSFET N-CH 55V 260A TO263-7 Packaging: Tube Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 (IXTA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V |
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IXTA260N055T2-7 | Виробник : IXYS |
MOSFET 260 Amps 55V |
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IXTA260N055T2-7 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns Case: TO263-7 Mounting: SMD Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Gate charge: 0.14µC Kind of channel: enhanced Reverse recovery time: 60ns Drain-source voltage: 55V Drain current: 260A On-state resistance: 3.3mΩ |
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