IXTA260N055T2 Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 55V 260A TO263
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Технічний опис IXTA260N055T2 Littelfuse Inc.
Description: MOSFET N-CH 55V 260A TO263, Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 480W (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 260A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції IXTA260N055T2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXTA260N055T2 | IXYS |
 MOSFETs TO263 N CHAN 55V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
 |
IXTA260N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns Case: TO263 Mounting: SMD Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Gate charge: 0.14µC Reverse recovery time: 60ns On-state resistance: 3.3mΩ Drain current: 260A Power dissipation: 480W Drain-source voltage: 55V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTA260N055T2 |
|
Виробник: IXYS
MOSFETs TO263 N CHAN 55V
MOSFETs TO263 N CHAN 55V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXTA260N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Case: TO263
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Case: TO263
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.