Продукція > IXYS > IXTA260N055T2

IXTA260N055T2 IXYS

Name: IXTA260N055T2
Brand: IXYS
SKU: 459857309-1
Price: 391.18 UAH
Availability: BackOrder

Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
кількість в упаковці: 1 шт

товару немає в наявності

В кошику од. на суму грн.

Відгуки про товар

Написати відгук

Технічний опис IXTA260N055T2 IXYS

Description: MOSFET N-CH 55V 260A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V.

Інші пропозиції IXTA260N055T2

Назва	Виробник	Інформація	Доступність	Ціна
IXTA260N055T2	Виробник : Littelfuse Inc.	Description: MOSFET N-CH 55V 260A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V	товару немає в наявності	В кошику од. на суму грн.
IXTA260N055T2	Виробник : IXYS	MOSFET MSFT N-CH TRENCH GATE -GEN2	товару немає в наявності	В кошику од. на суму грн.
IXTA260N055T2	Виробник : IXYS	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 260A Power dissipation: 480W Case: TO263 On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 60ns	товару немає в наявності	В кошику од. на суму грн.