Технічний опис IXTA26P10T Littelfuse
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263, Type of transistor: P-MOSFET, Technology: TrenchP™, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -26A, Power dissipation: 150W, Case: TO263, Gate-source voltage: ±15V, On-state resistance: 90mΩ, Mounting: SMD, Gate charge: 52nC, Kind of package: tube, Kind of channel: enhanced, Reverse recovery time: 70ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTA26P10T
| Фото | Назва | Виробник | Інформація |
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IXTA26P10T | Виробник : IXYS |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO263 Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Gate charge: 52nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 70ns кількість в упаковці: 1 шт |
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IXTA26P10T | Виробник : IXYS |
Description: MOSFET P-CH 100V 26A TO-263 |
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IXTA26P10T | Виробник : IXYS |
MOSFET TenchP Power MOSFET |
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IXTA26P10T | Виробник : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO263 Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Gate charge: 52nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 70ns |
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