Технічний опис IXTA26P10T IXYS
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263, Type of transistor: P-MOSFET, Drain-source voltage: -100V, Drain current: -26A, Power dissipation: 150W, Case: TO263, Gate-source voltage: ±15V, On-state resistance: 90mΩ, Mounting: SMD, Kind of channel: enhancement, Polarisation: unipolar, Technology: TrenchP™, Reverse recovery time: 70ns, Kind of package: tube, Gate charge: 52nC.
Інші пропозиції IXTA26P10T
| Фото | Назва | Виробник | Інформація |
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IXTA26P10T | Виробник : IXYS |
 MOSFET TenchP Power MOSFET |
товару немає в наявності |
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IXTA26P10T | Виробник : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263 Type of transistor: P-MOSFET Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO263 Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement Polarisation: unipolar Technology: TrenchP™ Reverse recovery time: 70ns Kind of package: tube Gate charge: 52nC |
товару немає в наявності |