Технічний опис IXTA270N04T4 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263; 48ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 270A, Power dissipation: 375W, Case: TO263, On-state resistance: 2.2mΩ, Mounting: SMD, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: thrench gate power mosfet, Gate charge: 182nC, Reverse recovery time: 48ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTA270N04T4
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IXTA270N04T4 | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263; 48ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 375W Case: TO263 On-state resistance: 2.2mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Gate charge: 182nC Reverse recovery time: 48ns кількість в упаковці: 1 шт |
товару немає в наявності |
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IXTA270N04T4 | Виробник : IXYS |
MOSFET 40V/270A TrenchT4 Power MOSFET |
товару немає в наявності |
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IXTA270N04T4 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263; 48ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 375W Case: TO263 On-state resistance: 2.2mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Gate charge: 182nC Reverse recovery time: 48ns |
товару немає в наявності |