на замовлення 10 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 413.59 грн |
| 10+ | 365.45 грн |
| 50+ | 197.61 грн |
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Технічний опис IXTA3N100D2 IXYS
Description: MOSFET N-CH 1000V 3A TO263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 125W (Tc), Supplier Device Package: TO-263AA, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V.
Інші пропозиції IXTA3N100D2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTA3N100D2 | Виробник : Littelfuse |
 Trans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK |
товар відсутній |
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IXTA3N100D2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO263 On-state resistance: 6Ω Mounting: SMD Gate charge: 1.02µC Kind of package: tube Kind of channel: depleted Reverse recovery time: 17ns |
товар відсутній |
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IXTA3N100D2 | Виробник : IXYS |
Description: MOSFET N-CH 1000V 3A TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V FET Feature: Depletion Mode Power Dissipation (Max): 125W (Tc) Supplier Device Package: TO-263AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V |
товар відсутній |
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IXTA3N100D2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO263 On-state resistance: 6Ω Mounting: SMD Gate charge: 1.02µC Kind of package: tube Kind of channel: depleted Reverse recovery time: 17ns |
товар відсутній |