Технічний опис IXTA3N100D2HV-TRL Littelfuse
Description: MOSFET N-CH 1000V 3A TO263HV, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tj), Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263HV, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V.
Інші пропозиції IXTA3N100D2HV-TRL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXTA3N100D2HV-TRL | Виробник : Littelfuse |
 Trans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV T/R |
товару немає в наявності |
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IXTA3N100D2HV-TRL | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 3A TO263HV Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V FET Feature: Depletion Mode Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263HV Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V |
товару немає в наявності |
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| IXTA3N100D2HV-TRL | Виробник : IXYS |
MOSFETs IXTA3N100D2HV TRL |
товару немає в наявності |