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IXTA3N100D2HV

IXTA3N100D2HV Littelfuse Inc.

littelfuse_discrete_mosfets_n-channel_depletion_mode_ixta3n100d2hv_datasheet.pdf.pdf
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 3A TO263HV
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Part Status: Active
Supplier Device Package: TO-263HV
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Технічний опис IXTA3N100D2HV Littelfuse Inc.

Description: MOSFET N-CH 1000V 3A TO263HV, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 0V, Part Status: Active, Supplier Device Package: TO-263HV, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V, Current - Continuous Drain (Id) @ 25°C: 3A (Tj), FET Type: N-Channel, Depletion Mode, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.

Інші пропозиції IXTA3N100D2HV

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IXTA3N100D2HV IXTA3N100D2HV IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Depletion_Mode_IXTA3N100D2HV_Datasheet.PDF MOSFETs TO263 1KV 3A N-CH DEPL
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IXTA3N100D2HV IXTA3N100D2HV IXYS IXTA3N100D2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
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IXTA3N100D2HV Littelfuse_Discrete_MOSFETs_N_Channel_Depletion_Mode_IXTA3N100D2HV_Datasheet.PDF
IXTA3N100D2HV
Виробник: IXYS
MOSFETs TO263 1KV 3A N-CH DEPL
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IXTA3N100D2HV IXTA3N100D2HV.pdf
IXTA3N100D2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
товару немає в наявності
В кошику  од. на суму  грн.