IXTA48P05T-TRL IXYS
Виробник: IXYS
Description: MOSFET P-CH 50V 48A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
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Технічний опис IXTA48P05T-TRL IXYS
Description: MOSFET P-CH 50V 48A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V.
Інші пропозиції IXTA48P05T-TRL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXTA48P05T-TRL | Виробник : IXYS |
MOSFETs IXTA48P05T TRL |
товару немає в наявності |
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| IXTA48P05T-TRL | Виробник : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263 Type of transistor: P-MOSFET Drain-source voltage: 50V Drain current: 48A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: 15V On-state resistance: 30mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |