Технічний опис IXTA4N80P Littelfuse
Description: MOSFET N-CH 800V 3.6A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 100µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V.
Інші пропозиції IXTA4N80P
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IXTA4N80P | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 8A Power dissipation: 100W Case: TO263 Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: SMD Gate charge: 14.2nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 560ns кількість в упаковці: 1 шт |
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IXTA4N80P | Виробник : IXYS |
Description: MOSFET N-CH 800V 3.6A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 100µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V |
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IXTA4N80P | Виробник : IXYS |
MOSFET 3.5 Amps 800V 3 Rds |
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IXTA4N80P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 8A Power dissipation: 100W Case: TO263 Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: SMD Gate charge: 14.2nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 560ns |
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