Технічний опис IXTA75N10P IXYS
Description: MOSFET N-CH 100V 75A TO263, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 5.5V @ 250µA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc).
Інші пропозиції IXTA75N10P за ціною від 160.62 грн до 382.10 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTA75N10P | Littelfuse Inc. |
 Description: MOSFET N-CH 100V 75A TO263Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263AA Vgs(th) (Max) @ Id: 5.5V @ 250µA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
на замовлення 844 шт: термін постачання 21-31 дні (днів) |
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| IXTA75N10P |
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Виробник: Littelfuse Inc.
Description: MOSFET N-CH 100V 75A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Description: MOSFET N-CH 100V 75A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
на замовлення 844 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 382.10 грн |
| 50+ | 207.40 грн |
| 100+ | 191.33 грн |
| 500+ | 160.62 грн |