IXTA76N25T IXYS
Виробник: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 148ns
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
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Технічний опис IXTA76N25T IXYS
Description: MOSFET N-CH 250V 76A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V, Power Dissipation (Max): 460W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V.
Інші пропозиції IXTA76N25T
| Фото | Назва | Виробник | Інформація |
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Ціна |
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IXTA76N25T | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 250V 76A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
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IXTA76N25T | Виробник : IXYS |
MOSFETs 76 Amps 250V 39 Rds |
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IXTA76N25T | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 76A Power dissipation: 460W Case: TO263 On-state resistance: 44mΩ Mounting: SMD Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 148ns Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |