IXTA8N50P

N-CH 500V 8A 0.8Om TO-263 Транзистори

Виробник: IXYS
Description: MOSFET N-CH 500V 8A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube

Виробник: IXYS
MOSFETs 8 Amps 500V 0.8 Ohm Rds