IXTF1N250 IXYS
Виробник: IXYS
Description: MOSFET N-CH 2500V 1A ISOPLUS I4
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 2500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOPLUS i4-PAC™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac™-5 (3 Leads)
Packaging: Tube
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Технічний опис IXTF1N250 IXYS
Description: MOSFET N-CH 2500V 1A ISOPLUS I4, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 2500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: ISOPLUS i4-PAC™, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 110W, Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: i4-Pac™-5 (3 Leads), Packaging: Tube.
