Технічний опис IXTF1N250 IXYS
Description: MOSFET N-CH 2500V 1A ISOPLUS I4, Packaging: Tube, Package / Case: i4-Pac™-5 (3 Leads), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V, Power Dissipation (Max): 110W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ISOPLUS i4-PAC™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 2500 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V.
Інші пропозиції IXTF1N250
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTF1N250 | Виробник : Littelfuse |
 Trans MOSFET N-CH Si 2.5KV 1A 3-Pin ISOPLUS I4-PAC |
товар відсутній |
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IXTF1N250 | Виробник : Littelfuse |
Trans MOSFET N-CH Si 2.5KV 1A 3-Pin ISOPLUS I4-PAC |
товар відсутній |
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| IXTF1N250 | Виробник : IXYS |
Description: MOSFET N-CH 2500V 1A ISOPLUS I4 Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V Power Dissipation (Max): 110W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ISOPLUS i4-PAC™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 2500 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V |
товар відсутній |
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IXTF1N250 | Виробник : IXYS |
MOSFET 2500V 1A HV Power MOSFET |
товар відсутній |