на замовлення 2 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5909.29 грн |
| 10+ | 5317.89 грн |
| 25+ | 4411.82 грн |
| 50+ | 4314.6 грн |
| 100+ | 4207.38 грн |
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Технічний опис IXTF1R4N450 IXYS
Description: MOSFET N-CH 4500V 1.4A I4PAC, Packaging: Tube, Package / Case: i4-Pac™-5 (3 Leads), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 40Ohm @ 50mA, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 6V @ 250µA, Supplier Device Package: ISOPLUS i4-PAC™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 4500 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V.
Інші пропозиції IXTF1R4N450
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTF1R4N450 | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 4.2A; 190W; 660ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 1.4A Pulsed drain current: 4.2A Power dissipation: 190W Case: ISOPLUS i4-pac™ x024c Gate-source voltage: ±20V On-state resistance: 40Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 660ns кількість в упаковці: 1 шт |
товар відсутній |
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IXTF1R4N450 | Виробник : IXYS |
Description: MOSFET N-CH 4500V 1.4A I4PAC Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 40Ohm @ 50mA, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 6V @ 250µA Supplier Device Package: ISOPLUS i4-PAC™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 4500 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
товар відсутній |
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IXTF1R4N450 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 4.2A; 190W; 660ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 1.4A Pulsed drain current: 4.2A Power dissipation: 190W Case: ISOPLUS i4-pac™ x024c Gate-source voltage: ±20V On-state resistance: 40Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 660ns |
товар відсутній |