на замовлення 264 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1966.45 грн |
| 10+ | 1425.96 грн |
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Технічний опис IXTH04N300P3HV IXYS
Description: MOSFET N-CH 3000V 400MA TO247HV, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Tc), Rds On (Max) @ Id, Vgs: 190Ohm @ 200mA, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247HV, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 3000 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 25 V.
Інші пропозиції IXTH04N300P3HV
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IXTH04N300P3HV | Виробник : Littelfuse |
 N-Channel Enhancement Mode Power MOSFET |
товару немає в наявності |
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IXTH04N300P3HV | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Case: TO247HV Features of semiconductor devices: standard power mosfet Polarisation: unipolar Gate charge: 13nC Reverse recovery time: 1.1µs Drain current: 0.4A Power dissipation: 104W On-state resistance: 190Ω Drain-source voltage: 3kV Kind of package: tube кількість в упаковці: 1 шт |
товару немає в наявності |
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IXTH04N300P3HV | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 3000V 400MA TO247HV Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 190Ohm @ 200mA, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 3000 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 25 V |
товару немає в наявності |
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IXTH04N300P3HV | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Case: TO247HV Features of semiconductor devices: standard power mosfet Polarisation: unipolar Gate charge: 13nC Reverse recovery time: 1.1µs Drain current: 0.4A Power dissipation: 104W On-state resistance: 190Ω Drain-source voltage: 3kV Kind of package: tube |
товару немає в наявності |