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Технічний опис IXTH130N20T IXYS
Description: MOSFET N-CH 200V 130A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V.
Інші пропозиції IXTH130N20T
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IXTH130N20T | IXYS |
 Description: MOSFET N-CH 200V 130A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXTH130N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W Drain-source voltage: 200V Drain current: 75A Case: TO247-3 Polarisation: unipolar On-state resistance: 16mΩ Pulsed drain current: 320A Power dissipation: 830W Technology: Trench™ Kind of channel: enhancement Gate charge: 150nC Reverse recovery time: 150ns Gate-source voltage: ±20V Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXTH130N20T | Littelfuse |
Trans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247 |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
| IXTH130N20T |
|
Виробник: IXYS
Description: MOSFET N-CH 200V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Description: MOSFET N-CH 200V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IXTH130N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Drain-source voltage: 200V
Drain current: 75A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 16mΩ
Pulsed drain current: 320A
Power dissipation: 830W
Technology: Trench™
Kind of channel: enhancement
Gate charge: 150nC
Reverse recovery time: 150ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Drain-source voltage: 200V
Drain current: 75A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 16mΩ
Pulsed drain current: 320A
Power dissipation: 830W
Technology: Trench™
Kind of channel: enhancement
Gate charge: 150nC
Reverse recovery time: 150ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику
од. на суму грн.
| IXTH130N20T |
|
Виробник: Littelfuse
Trans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.