IXTH1N300P3HV IXYS
Виробник: IXYS
Description: MOSFET N-CH 3000V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 50Ohm @ 500mA, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 3000 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 25 V
Description: MOSFET N-CH 3000V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 50Ohm @ 500mA, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 3000 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 25 V
на замовлення 718 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 2500.38 грн |
10+ | 2220.96 грн |
100+ | 1896.55 грн |
Відгуки про товар
Написати відгук
Технічний опис IXTH1N300P3HV IXYS
Description: MOSFET N-CH 3000V 1A TO247HV, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 50Ohm @ 500mA, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 3000 V, Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 25 V.
Інші пропозиції IXTH1N300P3HV за ціною від 1686.15 грн до 2579.39 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXTH1N300P3HV | Виробник : IXYS | MOSFET MSFT N-CH STD-POLAR3 |
на замовлення 235 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
IXTH1N300P3HV | Виробник : Littelfuse | Trans MOSFET N-CH 3KV 1A |
товар відсутній |
||||||||||||||||||
IXTH1N300P3HV | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us Case: TO247HV Mounting: THT On-state resistance: 50Ω Reverse recovery time: 1.8µs Power dissipation: 195W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 1A Kind of channel: enhanced Drain-source voltage: 3kV Type of transistor: N-MOSFET Kind of package: tube кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||||
IXTH1N300P3HV | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us Case: TO247HV Mounting: THT On-state resistance: 50Ω Reverse recovery time: 1.8µs Power dissipation: 195W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 1A Kind of channel: enhanced Drain-source voltage: 3kV Type of transistor: N-MOSFET Kind of package: tube |
товар відсутній |