| Кількість | Ціна |
|---|---|
| 1+ | 868.22 грн |
| 10+ | 563.66 грн |
| 120+ | 468.05 грн |
| 510+ | 432.84 грн |
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Технічний опис IXTH20P50P IXYS
Description: MOSFET P-CH 500V 20A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 10A, 10V, Power Dissipation (Max): 460W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V.
Інші пропозиції IXTH20P50P
| Фото | Назва | Виробник | Інформація | Доступність | _PRICE_WITHOUT_VAT | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTH20P50P | Littelfuse Inc. |
 Description: MOSFET P-CH 500V 20A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 10A, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V |
на замовлення 1326 шт: термін постачання 21-31 дні (днів) |
|
| IXTH20P50P |
|
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 500V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 10A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
Description: MOSFET P-CH 500V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 10A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
на замовлення 1326 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 889.25 грн |
| 30+ | 537.19 грн |
| 120+ | 468.49 грн |
| 510+ | 426.76 грн |