Продукція > IXYS > IXTH240N15X4

IXTH240N15X4 IXYS


Littelfuse_Discrete_MOSFETs_N_Channel_Ultra_Junction_IXT_240N15X4_Datasheet.PDF
Виробник: IXYS
MOSFETs TO247 150V 240A N-CH HIPER
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
КількістьЦіна без ПДВ
1+916.89 грн
10+631.37 грн
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис IXTH240N15X4 IXYS

Description: MOSFET N-CH 150V 240A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 120A, 10V, Power Dissipation (Max): 940W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V.

Інші пропозиції IXTH240N15X4

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IXTH240N15X4 IXTH240N15X4 IXYS littelfuse-discrete-mosfets-ixt-240n15x4-datasheet?assetguid=f07a4921-4c00-4f9e-865d-595f4766a796 Description: MOSFET N-CH 150V 240A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 120A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTH240N15X4 IXTH240N15X4 IXYS IXTH240N15X4_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Features of semiconductor devices: ultra junction x-class
товару немає в наявності
В кошику  од. на суму  грн.
IXTH240N15X4 littelfuse-discrete-mosfets-ixt-240n15x4-datasheet?assetguid=f07a4921-4c00-4f9e-865d-595f4766a796
Виробник: IXYS
Description: MOSFET N-CH 150V 240A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 120A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTH240N15X4 IXTH240N15X4_HV.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Features of semiconductor devices: ultra junction x-class
товару немає в наявності
В кошику  од. на суму  грн.