IXTH300N04T2 IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO247-3; 53ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO247-3; 53ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
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Технічний опис IXTH300N04T2 IXYS
Description: MOSFET N-CH 40V 300A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V.
Інші пропозиції IXTH300N04T2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTH300N04T2 | Виробник : IXYS |
Description: MOSFET N-CH 40V 300A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V |
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IXTH300N04T2 | Виробник : IXYS | MOSFET Trench T2 Power MOSFET |
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IXTH300N04T2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO247-3; 53ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Gate charge: 145nC Kind of channel: enhanced Reverse recovery time: 53ns Drain-source voltage: 40V Drain current: 300A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 480W Features of semiconductor devices: thrench gate power mosfet |
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