IXTH30N50P IXYS
Виробник: IXYS
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 596.52 грн |
30+ | 458.71 грн |
120+ | 410.41 грн |
510+ | 339.85 грн |
Відгуки про товар
Написати відгук
Технічний опис IXTH30N50P IXYS
Description: MOSFET N-CH 500V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V, Power Dissipation (Max): 460W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V.
Інші пропозиції IXTH30N50P за ціною від 300.43 грн до 661.27 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXTH30N50P | Виробник : IXYS | MOSFET 30.0 Amps 500 V 0.2 Ohm Rds |
на замовлення 361 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||
IXTH30N50P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Gate charge: 70nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 460W Features of semiconductor devices: standard power mosfet кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
IXTH30N50P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Gate charge: 70nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 460W Features of semiconductor devices: standard power mosfet |
товар відсутній |