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IXTH420N04T2

IXTH420N04T2 IXYS

littelfuse_discrete_mosfets_n-channel_trench_gate_ixth420n04t2_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 40V 420A TO247
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Технічний опис IXTH420N04T2 IXYS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 420A, Power dissipation: 935W, Case: TO247-3, On-state resistance: 2mΩ, Mounting: THT, Gate charge: 315nC, Kind of package: tube, Kind of channel: enhancement, Reverse recovery time: 74ns, Features of semiconductor devices: thrench gate power mosfet.

Інші пропозиції IXTH420N04T2

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IXTH420N04T2 IXTH420N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixth420n04t2_datasheet.pdf.pdf MOSFET Trench T2 Power MOSFET
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В кошику  од. на суму  грн.
IXTH420N04T2 IXTH420N04T2 IXYS IXTH420N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTH420N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixth420n04t2_datasheet.pdf.pdf
IXTH420N04T2
Виробник: IXYS
MOSFET Trench T2 Power MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXTH420N04T2 IXTH420N04T2.pdf
IXTH420N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.