IXTH50N30L2 IXYS
Виробник: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 540W; TO247-3; 430ns
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Power dissipation: 540W
Type of transistor: N-MOSFET
On-state resistance: 72mΩ
Drain current: 50A
Drain-source voltage: 300V
Features of semiconductor devices: linear power mosfet
Gate charge: 330nC
Kind of channel: enhanced
Kind of package: tube
Reverse recovery time: 430ns
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис IXTH50N30L2 IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 540W; TO247-3; 430ns, Mounting: THT, Case: TO247-3, Polarisation: unipolar, Power dissipation: 540W, Type of transistor: N-MOSFET, On-state resistance: 72mΩ, Drain current: 50A, Drain-source voltage: 300V, Features of semiconductor devices: linear power mosfet, Gate charge: 330nC, Kind of channel: enhanced, Kind of package: tube, Reverse recovery time: 430ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTH50N30L2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
IXTH50N30L2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 540W; TO247-3; 430ns Mounting: THT Case: TO247-3 Polarisation: unipolar Power dissipation: 540W Type of transistor: N-MOSFET On-state resistance: 72mΩ Drain current: 50A Drain-source voltage: 300V Features of semiconductor devices: linear power mosfet Gate charge: 330nC Kind of channel: enhanced Kind of package: tube Reverse recovery time: 430ns |
товар відсутній |