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Технічний опис IXTH52N65X IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 52A; 660W; TO247-3; 435ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 52A, Power dissipation: 660W, Case: TO247-3, On-state resistance: 68mΩ, Mounting: THT, Gate charge: 113nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: ultra junction x-class, Reverse recovery time: 435ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTH52N65X
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IXTH52N65X | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 52A; 660W; TO247-3; 435ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 52A Power dissipation: 660W Case: TO247-3 On-state resistance: 68mΩ Mounting: THT Gate charge: 113nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 435ns кількість в упаковці: 1 шт |
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IXTH52N65X | Виробник : IXYS |
MOSFET 650V/9A Power MOSFET |
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IXTH52N65X | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 52A; 660W; TO247-3; 435ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 52A Power dissipation: 660W Case: TO247-3 On-state resistance: 68mΩ Mounting: THT Gate charge: 113nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 435ns |
товар відсутній |