IXTH52N65X IXYS

Description: MOSFET N-CH 650V 52A TO247, Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247 (IXTH), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 660W (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.