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Технічний опис IXTH64N65X IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 64A, Power dissipation: 890W, Case: TO247-3, On-state resistance: 51mΩ, Mounting: THT, Gate charge: 143nC, Kind of package: tube, Kind of channel: enhancement, Reverse recovery time: 450ns, Features of semiconductor devices: ultra junction x-class.
Інші пропозиції IXTH64N65X
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
.jpg "IXTH64N65X") |
IXTH64N65X | IXYS |
 Description: MOSFET N-CH 650V 64A TO247 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXTH64N65X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 64A Power dissipation: 890W Case: TO247-3 On-state resistance: 51mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 450ns Features of semiconductor devices: ultra junction x-class |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTH64N65X |
|
Виробник: IXYS
Description: MOSFET N-CH 650V 64A TO247
Description: MOSFET N-CH 650V 64A TO247
товару немає в наявності
В кошику
од. на суму грн.
| IXTH64N65X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 450ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 450ns
Features of semiconductor devices: ultra junction x-class
товару немає в наявності
В кошику
од. на суму грн.