на замовлення 330 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 846.64 грн |
| 10+ | 736.28 грн |
| 120+ | 553.45 грн |
| 270+ | 524.74 грн |
| 510+ | 470.67 грн |
| 1020+ | 468.66 грн |
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Технічний опис IXTH6N150 IXYS
Description: MOSFET N-CH 1500V 6A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 500mA, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V.
Інші пропозиції IXTH6N150
| Фото | Назва | Виробник | Інформація |
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IXTH6N150 | Виробник : Littelfuse |
 Trans MOSFET N-CH 1.5KV 6A 3-Pin(3+Tab) TO-247 |
товар відсутній |
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IXTH6N150 | Виробник : Littelfuse |
Trans MOSFET N-CH 1.5KV 6A 3-Pin(3+Tab) TO-247 |
товар відсутній |
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IXTH6N150 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO247-3; 1.5us Drain-source voltage: 1.5kV Drain current: 6A Type of transistor: N-MOSFET Power dissipation: 540W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 67nC Kind of channel: enhanced Mounting: THT Case: TO247-3 Reverse recovery time: 1.5µs кількість в упаковці: 1 шт |
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IXTH6N150 | Виробник : IXYS |
Description: MOSFET N-CH 1500V 6A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 500mA, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V |
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IXTH6N150 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO247-3; 1.5us Drain-source voltage: 1.5kV Drain current: 6A Type of transistor: N-MOSFET Power dissipation: 540W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 67nC Kind of channel: enhanced Mounting: THT Case: TO247-3 Reverse recovery time: 1.5µs |
товар відсутній |