на замовлення 300 шт:
термін постачання 322-331 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 688.95 грн |
| 10+ | 582.85 грн |
| 30+ | 421.8 грн |
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Технічний опис IXTH96N20P IXYS
Description: MOSFET N-CH 200V 96A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V.
Інші пропозиції IXTH96N20P
| Фото | Назва | Виробник | Інформація |
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IXTH96N20P | Виробник : Littelfuse |
 Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) TO-247AD |
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IXTH96N20P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 96A; 600W; TO247-3 Mounting: THT Power dissipation: 600W Gate charge: 145nC Polarisation: unipolar Technology: PolarHT™ Drain current: 96A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247-3 On-state resistance: 24mΩ Reverse recovery time: 160ns кількість в упаковці: 1 шт |
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IXTH96N20P | Виробник : IXYS |
Description: MOSFET N-CH 200V 96A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
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IXTH96N20P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 96A; 600W; TO247-3 Mounting: THT Power dissipation: 600W Gate charge: 145nC Polarisation: unipolar Technology: PolarHT™ Drain current: 96A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247-3 On-state resistance: 24mΩ Reverse recovery time: 160ns |
товар відсутній |