IXTI10N60P IXYS

Description: MOSFET N-CH 600V 10A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-262 (I2PAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V.