IXTJ4N150 Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1500V 2.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISO247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
Description: MOSFET N-CH 1500V 2.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISO247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 869.82 грн |
| 30+ | 550.13 грн |
| 120+ | 493.77 грн |
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Технічний опис IXTJ4N150 Littelfuse Inc.
Description: MOSFET N-CH 1500V 2.5A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: ISO247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V.
Інші пропозиції IXTJ4N150 за ціною від 518.66 грн до 938.12 грн
| Фото | Назва | Виробник | Інформація |
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IXTJ4N150 | Виробник : IXYS |
 MOSFETs High Voltage Power MOSFET |
на замовлення 286 шт: термін постачання 21-30 дні (днів) |
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IXTJ4N150 | Виробник : Littelfuse |
Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-247 ISO |
товару немає в наявності |
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IXTJ4N150 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 2.5A Power dissipation: 110W Case: ISO247™ Gate-source voltage: ±30V On-state resistance: 6Ω Mounting: THT Gate charge: 44.5nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 900ns кількість в упаковці: 1 шт |
товару немає в наявності |
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IXTJ4N150 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 2.5A Power dissipation: 110W Case: ISO247™ Gate-source voltage: ±30V On-state resistance: 6Ω Mounting: THT Gate charge: 44.5nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 900ns |
товару немає в наявності |