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IXTK110N20L2

IXTK110N20L2 IXYS

DS100195IXTKTX110N20L2.pdf
Виробник: IXYS
Description: MOSFET N-CH 200V 110A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
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Технічний опис IXTK110N20L2 IXYS

Description: MOSFET N-CH 200V 110A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3mA, Supplier Device Package: TO-264 (IXTK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V.

Інші пропозиції IXTK110N20L2

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IXTK110N20L2 IXTK110N20L2 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Linear_IXT_110N20_Datasheet.PDF MOSFETs LINEAR L2 SERIES MOSFET 200V 110A
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IXTK110N20L2 IXTK110N20L2 IXYS IXT_110N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Features of semiconductor devices: linear power mosfet
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IXTK110N20L2 Littelfuse_Discrete_MOSFETs_N_Channel_Linear_IXT_110N20_Datasheet.PDF
IXTK110N20L2
Виробник: IXYS
MOSFETs LINEAR L2 SERIES MOSFET 200V 110A
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В кошику  од. на суму  грн.
IXTK110N20L2 IXT_110N20L2.pdf
IXTK110N20L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Features of semiconductor devices: linear power mosfet
товару немає в наявності
В кошику  од. на суму  грн.