Технічний опис IXTK140N30P IXYS
Description: MOSFET N-CH 300V 140A TO264, Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-264 (IXTK), Vgs(th) (Max) @ Id: 5V @ 500µA, Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.
Інші пропозиції IXTK140N30P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IXTK140N30P |
 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | ||
 |
IXTK140N30P | IXYS |
Description: MOSFET N-CH 300V 140A TO264 Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-264 (IXTK) Vgs(th) (Max) @ Id: 5V @ 500µA Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXTK140N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264 Mounting: THT Gate charge: 185nC On-state resistance: 0.24Ω Polarisation: unipolar Kind of package: tube Gate-source voltage: ±20V Drain current: 140A Type of transistor: N-MOSFET Case: TO264 Drain-source voltage: 300V Power dissipation: 1.04kW Technology: Polar™ Reverse recovery time: 250ns Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTK140N30P |
|
Виробник: IXYS
Description: MOSFET N-CH 300V 140A TO264
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 500µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 300V 140A TO264
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 500µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXTK140N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Gate charge: 185nC
On-state resistance: 0.24Ω
Polarisation: unipolar
Kind of package: tube
Gate-source voltage: ±20V
Drain current: 140A
Type of transistor: N-MOSFET
Case: TO264
Drain-source voltage: 300V
Power dissipation: 1.04kW
Technology: Polar™
Reverse recovery time: 250ns
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Gate charge: 185nC
On-state resistance: 0.24Ω
Polarisation: unipolar
Kind of package: tube
Gate-source voltage: ±20V
Drain current: 140A
Type of transistor: N-MOSFET
Case: TO264
Drain-source voltage: 300V
Power dissipation: 1.04kW
Technology: Polar™
Reverse recovery time: 250ns
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.