IXTK170N10P IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: Polar™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 100V
Drain current: 170A
Reverse recovery time: 120ns
Gate charge: 198nC
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Power dissipation: 715W
Polarisation: unipolar
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 710.54 грн |
| 3+ | 595.80 грн |
| 10+ | 580.01 грн |
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Технічний опис IXTK170N10P IXYS
Description: MOSFET N-CH 100V 170A TO264, Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-264 (IXTK), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 715W (Tc).
Інші пропозиції IXTK170N10P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXTK170N10P | Littelfuse Inc. |
Description: MOSFET N-CH 100V 170A TO264 Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264 (IXTK) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 715W (Tc) |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
 |
IXTK170N10P | IXYS |
MOSFETs 170 Amps 100V 0.009 Ohm Rds |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTK170N10P |
|
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 100V 170A TO264
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 715W (Tc)
Description: MOSFET N-CH 100V 170A TO264
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 715W (Tc)
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXTK170N10P |
|
Виробник: IXYS
MOSFETs 170 Amps 100V 0.009 Ohm Rds
MOSFETs 170 Amps 100V 0.009 Ohm Rds
товару немає в наявності
В кошику
од. на суму грн.