IXTK17N120L IXYS

Description: MOSFET N-CH 1200V 17A TO264, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-264 (IXTK), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 700W (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V.