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IXTK33N50

IXTK33N50 IXYS


littelfuse_discrete_mosfets_n-channel_standard_ixtk33n50_datasheet.pdf.pdf Виробник: IXYS
Description: MOSFET N-CH 500V 33A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
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Технічний опис IXTK33N50 IXYS

Description: MOSFET N-CH 500V 33A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V, Power Dissipation (Max): 416W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-264 (IXTK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V.

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IXTK33N50 IXTK33N50 Виробник : IXYS media-3323247.pdf MOSFET 33 Amps 500V 0.17 Rds
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