IXTK33N50 IXYS
Виробник: IXYS
Description: MOSFET N-CH 500V 33A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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Технічний опис IXTK33N50 IXYS
Description: MOSFET N-CH 500V 33A TO264, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-264 (IXTK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 416W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.
