Технічний опис IXTK550N055T2 Littelfuse
Description: MOSFET N-CH 55V 550A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 550A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-264 (IXTK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V.
Інші пропозиції IXTK550N055T2
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IXTK550N055T2 | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; TO264; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Power dissipation: 1.25kW Case: TO264 On-state resistance: 1.6mΩ Mounting: THT Gate charge: 595nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns кількість в упаковці: 1 шт |
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IXTK550N055T2 | Виробник : IXYS |
Description: MOSFET N-CH 55V 550A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 550A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-264 (IXTK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V |
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IXTK550N055T2 | Виробник : IXYS |
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET |
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IXTK550N055T2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; TO264; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Power dissipation: 1.25kW Case: TO264 On-state resistance: 1.6mΩ Mounting: THT Gate charge: 595nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns |
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