IXTK60N50L2 IXYS
Виробник: IXYS
Description: MOSFET N-CH 500V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
Description: MOSFET N-CH 500V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
на замовлення 752 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 2486.46 грн |
25+ | 1985.43 грн |
100+ | 1861.35 грн |
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Технічний опис IXTK60N50L2 IXYS
Description: MOSFET N-CH 500V 60A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-264 (IXTK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V.
Інші пропозиції IXTK60N50L2 за ціною від 1544.19 грн до 2701.16 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IXTK60N50L2 | Виробник : IXYS | MOSFET 60 Amps 500V |
на замовлення 1064 шт: термін постачання 21-30 дні (днів) |
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IXTK60N50L2 | Виробник : Littelfuse | Trans MOSFET N-CH 500V 60A 3-Pin(3+Tab) TO-264AA |
товар відсутній |
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IXTK60N50L2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO264 Drain current: 60A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 960W Features of semiconductor devices: linear power mosfet Gate charge: 610nC Kind of channel: enhanced Reverse recovery time: 980ns Drain-source voltage: 500V кількість в упаковці: 1 шт |
товар відсутній |
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IXTK60N50L2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO264 Drain current: 60A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 960W Features of semiconductor devices: linear power mosfet Gate charge: 610nC Kind of channel: enhanced Reverse recovery time: 980ns Drain-source voltage: 500V |
товар відсутній |