Технічний опис IXTK62N25 IXYS
Description: MOSFET N-CH 250V 62A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-264 (IXTK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V.
Інші пропозиції IXTK62N25
Фото | Назва | Виробник | Інформація |
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IXTK62N25 | Виробник : IXYS |
Description: MOSFET N-CH 250V 62A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-264 (IXTK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V |
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IXTK62N25 | Виробник : IXYS | MOSFET 62 Amps 250V 0.035 Rds |
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